p–n diode with hole- and electron-doped lanthanum manganites
نویسندگان
چکیده
منابع مشابه
A ‘p-n’diode with Hole and Electron-doped lanthanum manganites
The hole-doped manganite La0.7Ca0.3MnO3 and the electron-doped manganite La0.7Ce0.3MnO3 undergo an insulator to metal transition at around 250 K, above which both behave as a polaronic semiconductor. We have successfully fabricated an epitaxial trilayer (La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3), where SrTiO3 is an insulator. At room temperature, i.e. in the semiconducting regime, it exhibits asymm...
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We employ time-resolved resonant x-ray diffraction to study the melting of charge order and the associated insulator-to-metal transition in the doped manganite Pr_{0.5}Ca_{0.5}MnO_{3} after resonant excitation of a high-frequency infrared-active lattice mode. We find that the charge order reduces promptly and highly nonlinearly as function of excitation fluence. Density-functional theory calcul...
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1 Spin Superstructure Project (ERATO-SSS), Japan Science and Technology Agency (JST), AIST Central 4, Tsukuba 305-8562, Japan 2 Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan, and CREST, JST, Kawaguchi, Saitama 332-0012, Japan ERATO multiferroics project, JST, c/o Department of Applied Physics , University of Tokyo, Tokyo 113-8656, Japan Department...
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The three dimensional perovskite manganites R1−xAxMnO3 in the range of holedoping x > 0.5 are studied in detail using a double exchange model with degenerate eg orbitals including intraand inter-orbital correlations and near-neighbour Coulomb repulsion. We show that such a model captures the observed phase diagram and orbital-ordering in the intermediate to large band-width regime. It is argued...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2001
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1409592